Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia.

Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion mode power MOSFET that operates as a normally ...

Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...

Wide bandgap semiconductors, seen as significantly more energy-efficient, have emerged as leading contenders in the creation of FETs for next-generation power electronics. While diamond is believed to ...

Infineon Technologies is to develop a two-terminal semiconductor device that acts as a circuit breaker for hundreds of volts and amps: doubling the performance of its mains-voltage super-junction ...

WASHINGTON, D.C., Oct. 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide ...

Enter wide bandgap (WBG) semiconductors. Seen as significantly more energy-efficient, they have emerged as leading contenders in developing field-effect transistors (FETs) for next-generation power ...